IRF3205 (TO-220) N Channel MOSFET 55V/110A,200W Rds(on) 8.0mΩ Max

 IRF3205  (TO-220) N Channel MOSFET 55V/110A,200W Rds(on) 8.0mΩ Max

 Advanced Process Technology
 Ultra Low On-Resistance
 Dynamic dv/dt Rating
 175°C Operating Temperature
 Fast Switching
 Fully Avalanche Rated

Datasheet http://www.irf.com/product-info/datasheets/data/irf3205.pdf

 Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in a wide variety of

applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 watts. The low thermal

resistance and low package cost of the TO-220 contribute

to its wide acceptance throughout the industry.